Method for fabricating a micro-well of a biosensor

ABSTRACT

A bio-sensing semiconductor structure is provided. A transistor includes a channel region and a gate underlying the channel region. A first dielectric layer overlies the transistor. A first opening extends through the first dielectric layer to expose the channel region. A bio-sensing layer lines the first opening and covers an upper surface of the channel region. A second dielectric layer lines the first opening over the bio-sensing layer. A second opening within the first opening extends to the bio-sensing layer, through a region of the second dielectric layer overlying the channel region. A method for manufacturing the bio-sensing semiconductor structure is also provided.

BACKGROUND

Biosensors are devices for sensing and detecting analytes, and typicallyoperate on the basis of one or more of electronic, chemical, optical,and mechanical detection principles. Detection can be performed bydetecting the analytes themselves, or through interaction and reactionbetween reactants and the analytes. Biosensors are widely used indifferent life-science applications, ranging from environmentalmonitoring and basic life science research to Point-of-Care (PoC)in-vitro molecular diagnostics.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 illustrates a cross-sectional view of some embodiments of asemiconductor structure with a biosensor micro-well.

FIG. 2 illustrates a cross-sectional view of some embodiments of abiosensor with a micro-well.

FIG. 3 illustrates a flowchart of some embodiments of a method formanufacturing a biosensor with a micro-well.

FIGS. 4-12 illustrate a series of cross-sectional views of someembodiments of a biosensor at various stages of manufacture, thebiosensor having a micro-well.

DETAILED DESCRIPTION

The present disclosure provides many different embodiments, or examples,for implementing different features of this disclosure. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Moreover, “first”, “second”, “third”, etc. may be used herein for easeof description to distinguish between different elements of a figure ora series of figures. “first”, “second”, “third”, etc. are not intendedto be descriptive of the corresponding element. Therefore, “a firstdielectric layer” described in connection with a first figure may notnecessarily corresponding to a “first dielectric layer” described inconnection with another figure.

Some biosensors combine microelectromechanical systems (MEMS) technologywith complementary-metal-oxide-semiconductor (CMOS) technology. Thesebiosensors may include a CMOS device bonded to a carrier substratethrough a front side of the CMOS device. A micro-well may be arrangedover a transistor of the CMOS device within a dielectric layer arrangedon a backside of the CMOS device. Further, a MEMS device may be arrangedover the dielectric layer and bonded to the CMOS device through thebackside of the CMOS device.

During the manufacture of the foregoing biosensors, the width of themicro-well immediately above a channel region of the transistor and theintegrity of the channel region are critical for device performance.According to some methods, a single dry etch is performed into thedielectric layer to form the micro-well and to expose the channelregion. However, these methods may damage a surface of the channelregion and induce electrical failure. According to other methods, a dryetch is performed into the dielectric layer to form an opening.Thereafter, a wet etch is performed to expand the opening, therebyforming the micro-well and exposing the channel region. Advantageously,these other approaches may not damage the channel region. However, whilethese other methods may not damage the channel region, these othermethods may enlarge the micro-well beyond the desired width and reducethe ability of the micro-well to trap desired analytes or carriers ofthe analytes.

In view of the foregoing, the present application is directed towards amethod for manufacturing biosensors with improved control over themicro-well formation. Further, the present application is directedtowards a biosensor and a semiconductor structure resulting fromperformance of the method. According to the method, a first opening isformed exposing a channel region of the transistor using a first, dryetch, followed by a second, wet etch. Thereafter, the first opening islined by a bio-sensing layer and a dielectric layer overlying thebio-sensing layer. The bio-sensing layer is typically a high κdielectric having a dielectric constant exceeding about 3.9. With thebio-sensing and dielectric layers formed, a third etch is performedthrough the dielectric layer to the bio-sensing layer to form a secondopening with the critical width overlying the source/drain region.

Advantageously, by forming the micro-well according to the foregoingmethod, damage to the channel region may be prevented and control overthe micro-well width is improved. For example, the width of themicro-well immediately above the channel region may be reduced fromabout 0.4 micrometers (μm) to about 0.2 μm. As another example,micro-wells failing to meet within wafer (WiW) and/or wafer to wafer(WtW) uniformity metrics may be reduced from about 59% to less thanabout 10%. The less than 10%, non-conforming micro-wells may be causedby oxide thickness variation and wet etchant lifetime. Further, the samephoto mask may be used for the first, second, and third etches, so costsare minimally affected by the additional, third etch. Even more,etchants with a selectivity of about 20 for the dielectric layer,relative to the bio-sensing layer, are known, which may reduce overetching.

With reference to FIG. 1, a cross-sectional view 100 of some embodimentsof a semiconductor structure with a biosensor micro-well 102 isprovided. The biosensor micro-well 102 is arranged within a firstopening 104 of a first dielectric layer 106 between sidewalls of abio-sensing layer 108 and a second dielectric layer 110. The bio-sensinglayer 108 extends along an upper surface of the first dielectric layer106 and lines the first opening 104. The second dielectric layer 110extends along the upper surface, and lines the first opening 104, overthe bio-sensing layer 108. The first and second dielectric layers 106,110 may be, for example, an oxide, such as silicon dioxide. Further, thefirst dielectric layer 106 may, for example, have a thickness of about 1μm, and the second dielectric layer 110 may, for example, have athickness of about 1000 Angstroms. The bio-sensing layer 108 may be, forexample, a high κ dielectric, and/or may have, for example, a thicknessof about 100 Angstroms. A high κ dielectric is a dielectric with adielectric constant exceeding about 3.9, such as hafnium oxide (e.g.,HfO₂).

A second opening 112, with a smaller footprint than the first opening104, extends through the second dielectric layer 110 to the bio-sensinglayer 108. In some embodiments, the second opening has a width W ofabout 0.2 to about 0.4 μm. As will be seen hereafter, during theformation of the second opening 112, the bio-sensing layer 108 serves asan etch stop layer. This prevents damage to the surface underlying thebio-sensing layer 108 and allows greater control over the width W of thesecond opening 112. As described above, the width W and the underlyingsurface integrity are critical for device performance.

A transistor 114 is arranged under the biosensor micro-well 102 within asemiconductor layer 116 and a third, interlayer dielectric layer 118.The interlayer dielectric layer 118 is arranged under the firstdielectric layer 106, and the semiconductor layer 116 is arranged overthe interlayer dielectric layer 118 between the first and interlayerdielectric layers 106, 118. In some embodiments, the semiconductor layer116 abuts the first dielectric layer 106 and/or the bio-sensing layer108, and/or the interlayer dielectric layer 118 abuts the semiconductorlayer 116. The interlayer dielectric layer 118 may be, for example, anoxide or a low κ dielectric. A low κ dielectric is a dielectric with adielectric constant less than about 3.9. The semiconductor layer 116 maybe, for example, silicon or some other semiconductor.

The transistor 114 includes a pair of source/drain regions 120, achannel region 122 extending between the source/drain regions 120, and agate 124 arranged between the source/drain regions 120. The source/drainregions 120 are embedded within the semiconductor layer 116 and arrangedon opposing sides of the gate 124. The gate 124 is arranged in theinterlayer dielectric layer 118 and spaced from the semiconductor layer116 by a gate dielectric layer 126 of the transistor 114. The gatedielectric layer 126 extends into the interlayer dielectric layer 118from about even with an upper surface of the interlayer dielectric layer118, and abuts the gate 124 within the interlayer dielectric layer 118.The gate 124 is electrically coupled with a BEOL metallization stackunderlying the transistor 114 through a contact 128 arranged in theinterlayer dielectric layer 118 and typically abutting the gate 124. Thegate 124 and the contact 128 may be, for example, doped polysilicon ormetal, such as tungsten or copper. The gate dielectric layer 126 may be,for example, an oxide.

During use of the micro-well 102, a test sample is applied to themicro-well 102, typically by micro fluidics. The test sample may includeanalytes suspended in a fluid and, in some embodiments, bound tocarriers. To the extent that the test sample includes analytes, theanalytes land on exposed regions of the bio-sensing layer 108. Whenanalytes land on the bio-sensing layer 108, the amount of chargeoverlying the channel region 122 changes. For example, in someembodiments, when analytes land on the bio-sensing layer 108, abio-reaction occurs between the bio-sensing layer 108 and the analytesto release ions and increase the pH in the micro-well 102. The increasedpH thereafter induces a change in the amount of charge overlying thechannel region 122.

The change in the amount of charge overlying the channel region 122causes a change in the electrical characteristics of the transistor 114.By observing the electrical characteristics before and after the changein charge, the presence of analytes can be detected. For example, thethreshold voltage V_(T) of the transistor 114 may be increased by amountΔV_(T) when analytes are present in the micro-well 102. By applying avoltage V that is greater than V_(T), but less than V_(T)+ΔV_(T) to thegate 124, current will flow through the channel region 122 between thesource/drain regions 120 depending upon whether analytes are present inthe micro-well 102.

With reference to FIG. 2, a cross-sectional view 200 of some embodimentsof a biosensor with the micro-well 102 of FIG. 1 is provided. Themicro-well 102 is arranged within a first opening 104 on a backside ofan integrated circuit 202 between sidewalls of a bio-sensing layer 108and a second dielectric layer 110. The bio-sensing layer 108 extendsalong the backside and lines the first opening 104. The seconddielectric layer 110 extends along the backside, and lines the firstopening 104, over the bio-sensing layer 108. A second opening 112, witha smaller footprint than the first opening 104, extends through thesecond dielectric layer 110 to the bio-sensing layer 108. The seconddielectric layer 110 may be, for example, an oxide. The bio-sensinglayer 108 may be, for example, a high κ dielectric. In some embodiments,a MEMS structure 204 is arranged over the integrated circuit 202 and themicro-well 102 to channel a test sample to the micro-well 102 throughmicro fluidics.

The integrated circuit 202 includes a first dielectric layer 106, asemiconductor layer 116 underlying the first dielectric layer 106, aBEOL metallization stack 206 underlying the semiconductor layer 116, anda device layer 208 arranged between the semiconductor layer 116 and theBEOL metallization stack 206. As will be seen hereafter, the firstdielectric layer 106 and the semiconductor layer 116 may be the remnantsof a silicon-on-insulator (SOI) substrate. The first dielectric layer106 is arranged around the micro-well 102, and a transistor 114 of thedevice layer 208 is arranged under the micro-well 102.

The transistor 114 includes a pair of source/drain regions 120, achannel region 122 extending between the source/drain regions 120, and agate 124 arranged between the source/drain regions 120 of the pair. Thesource/drain regions 120 are embedded within the semiconductor layer 116and arranged on opposing sides of the gate 124. The gate 124 is arrangedin a third, interlayer dielectric layer 118 of the BEOL metallizationstack 206, and spaced from the semiconductor layer 116 by a fourth, gatedielectric layer 126 of the transistor 114. The gate dielectric layer126 extends into the interlayer dielectric layer 118 and abuts the gate124 within the interlayer dielectric layer 118. The gate 124 may be, forexample, doped polysilicon or metal. The gate dielectric layer 126 maybe, for example, an oxide.

The BEOL metallization stack 206 includes a plurality of metallizationlayers 210 stacked within the interlayer dielectric layer 118. One ormore contacts 128 of the BEOL metallization stack 206 extend from anupper metallization layer to the device layer 208, including the gate124 and/or the source/drain regions 120. Further, one or more first vias212 of the BEOL metallization stack 206 extend between the metallizationlayers 210 to interconnect the metallization layers 210. The interlayerdielectric layer 118 may be, for example, a low κ dielectric or anoxide. The metallization layers 210, the contacts 128, and the firstvias 212 may be, for example, a metal, such as copper or aluminum.

A carrier substrate 214 underlies the integrated circuit 202 between theintegrated circuit 202 and a ball grid array (BGA) 216. The BGA 216includes a redistribution layer (RDL) 218 arranged on a backside of thecarrier substrate 214 and electrically coupled to the metallizationlayers 210 of the BEOL metallization stack 206 through one or moresecond, through substrate vias 220 extending through the carriersubstrate 214. The RDL 218 is covered by a fifth, BGA dielectric layer222, and under bump metallization (UBM) layers 224 extend through theBGA dielectric layer 222 to electrically couple solder balls 226underlying the UBM layers 224 to the RDL 218. The BGA dielectric layer222 may be, for example, an epoxy or a single mode fiber (SMF). The RDL218, the UBM layers 224, the through substrate vias 220, and the solderballs 226 may be, for example, metals, such as copper, aluminum, andtungsten.

With reference to FIG. 3, a flowchart 300 of some embodiments of amethod for manufacturing a biosensor with a micro-well is provided.

At 302, an integrated circuit having a device layer arranged on a firstside of a first, SOI substrate is provided. The device layer includes atransistor gate overlying a channel region between a pair ofsource/drain regions.

At 304, the integrated circuit is bonded on the first side of the firstsubstrate to a second substrate through a first, upper side of thesecond substrate.

At 306, a planarization is performed into a second side of the firstsubstrate, opposite the first side of the first substrate, to remove afirst semiconductor layer of the first substrate and to expose a firstdielectric layer of the first substrate.

At 308, a first, dry etch is performed into the first dielectric layerover the channel region to form a first opening.

At 312, a second, wet etch is performed into a region of the firstdielectric layer surrounding the first opening to expand the firstopening and to expose the channel region.

At 314, a bio-sensing layer is formed over the first dielectric layerand lining the expanded, first opening. The bio-sensing layer has adielectric constant exceeding about 3.9

At 316, a second dielectric layer is formed over and lining thebio-sensing layer.

At 318, a third, dry etch is performed to the bio-sensing layer, througha region of the second dielectric layer overlying the channel region, toform a second opening.

At 320, a MEMS structure is bonded to the second substrate through thefirst substrate on the second side of the first substrate.

At 322, a BGA is formed on a second, lower side of the second substrate,wherein the second side of the second substrate is opposite the firstside of the second substrate.

Advantageously, by forming the micro-well with the additional, thirdetch, damage to the channel region is prevented and control over themicro-well width immediately above the channel region is improved.Further, the same mask may be used for the first, second, and thirdetches, so costs are minimally affected by the additional, third etch.Even more, etchants with a selectivity of about 20 for the seconddielectric layer, relative to the bio-sensing layer, are known, whichmay reduce over etching.

While the method described by the flowchart 300 is illustrated anddescribed herein as a series of acts or events, it will be appreciatedthat the illustrated ordering of such acts or events are not to beinterpreted in a limiting sense. For example, some acts may occur indifferent orders and/or concurrently with other acts or events apartfrom those illustrated and/or described herein. Further, not allillustrated acts may be required to implement one or more aspects orembodiments of the description herein, and one or more of the actsdepicted herein may be carried out in one or more separate acts and/orphases.

With reference to FIGS. 4-12, cross-sectional views of some embodimentsof a biosensor at various stages of manufacture are provided toillustrate the method of FIG. 3. Although FIGS. 4-12 are described inrelation to the method, it will be appreciated that the structuresdisclosed in FIGS. 4-12 are not limited to the method, but instead maystand alone as structures independent of the method. Similarly, althoughthe method is described in relation to FIGS. 4-12, it will beappreciated that the method is not limited to the structures disclosedin FIGS. 4-12, but instead may stand alone independent of the structuresdisclosed in FIGS. 4-12.

FIG. 4 illustrates a cross-sectional view 400 of some embodimentscorresponding to Act 302. As illustrated, an integrated circuit 202′ isprovided. The integrated circuit 202′ includes a first substrate 402including a carrier layer 404, a semiconductor layer 116, and a firstdielectric layer 106′ arranged between the semiconductor and carrierlayers 116, 404. Typically, the first substrate 402 is an SOI substrate,but other types of substrate are amenable. The carrier and semiconductorlayers 116, 404 may be, for example, silicon. The first dielectric layer106′ may be, for example, an oxide. Further, the first dielectric layer106′ may have, for example, a thickness of, for example, about 1 μm.

A device layer 208 having a transistor 114 is arranged over and withinthe second semiconductor layer 116. The transistor 114 includes a pairof source/drain regions 120, a channel region 122, a gate 124, and asecond, gate dielectric layer 126. The source/drain regions 120 areembedded within the second semiconductor layer 116, and the channelregion 122 is arranged in the second semiconductor layer 116 between thesource/drain regions 120. Typically, the source/drain regions 120 haveabout the same thickness as the second semiconductor layer 116. The gate124 is arranged over the second semiconductor layer 116 and the channelregion 122 between the source/drain regions 120. Further, the gate 124is spaced from the second semiconductor layer 116 and the channel region122 by the second, gate dielectric layer 126. The gate 124 may be, forexample, doped polysilicon or metal. The gate dielectric layer 126 maybe, for example, an oxide.

A BEOL metallization stack 206′ is arranged over the device layer 208and the first substrate 402. The BEOL metallization stack 206′ includesa plurality of metallization layers 210 stacked within a third,interlayer dielectric layer 118′. One or more contacts 128 of the BEOLmetallization stack 206′ extend from a lower metallization layer to thedevice layer 208, including the gate 124 and/or the source/drain regions120. Further, one or more first vias 212 of the BEOL metallization stack206′ extend between the metallization layers 210 to interconnect themetallization layers 210. The interlayer dielectric layer 118′ may be,for example, a low κ dielectric or an oxide. The metallization layers210, the contacts 128, and the first vias 212 may be, for example, ametal.

FIG. 5 illustrates a cross-sectional view 500 of some embodimentscorresponding to Act 304. As illustrated, the integrated circuit 202′ isrotated about 180 degrees about a horizontal axis and bonded to asecond, carrier substrate 214′ through a first, front side of theintegrated circuit 202′. The integrated circuit 202′ may be, forexample, bonded to the carrier substrate 214′ by a fusion bond or byusing an adhesive. The carrier substrate 214′ may be, for example, abulk silicon substrate or an SOI substrate.

FIG. 6 illustrates a cross-sectional view 600 of some embodimentscorresponding to Act 306. As illustrated, a planarization is performedinto a second, backside of the integrated circuit 202′, opposite thefront side of the integrated circuit 202′, to remove the carrier layer404 and to expose the first dielectric layer 106′. The process forperforming the planarization may include, for example, a chemicalmechanical polishing (CMP).

FIGS. 4-6 are directed to embodiments in which the first substrate 402includes carrier and semiconductor layers 116, 404 stacked on opposingsides of a dielectric layer 106′. It is to be appreciated, that in otherembodiments, the first substrate 402 may be a bulk semiconductorsubstrate. In such embodiments the planarization of Act 306 may beunnecessary. Further, before proceeding further in the method of FIG. 3,a dielectric layer may be formed over the bulk semiconductor substrateto achieve a semiconductor structure similar to that shown in FIG. 6.

FIG. 7 illustrates a cross-sectional view 700 of some embodimentscorresponding to Act 308. As illustrated, a first, dry etch is performedinto the backside of the remaining integrated circuit 202″ and theremaining first substrate 402′ to form a first opening 104′ over thechannel region 122. In other words, the first etch is performed into thefirst dielectric layer 106′ to form the first opening 104′ over thechannel region 122. The first etch is typically anistropic and does notextend completely through the first dielectric layer 106′. In someembodiments, the process for performing the first etch includes forminga first photoresist layer 702 masking regions of the first dielectriclayer 106′ surrounding the first opening 104′. Thereafter, a dry etchant704 is applied to the first dielectric layer 106′ according to the firstphotoresist layer 702. The dry etchant may have a base gas of, forexample, argon (Ar), tetrafluoromethane (CF₄), fluoroform (CHF₃), orsulfur hexafluoride (SF₆). In other embodiments, a wet etch or someother etch is performed in lieu of the dry etch.

FIG. 8 illustrates a cross-sectional view 800 of some embodimentscorresponding to Act 310. As illustrated, a second, wet etch isperformed into the backside of the remaining first substrate 402″, theremaining integrated circuit 202′″, and a region of the remaining firstdielectric layer 106″ extending along the first opening 104′. The secondetch is typically isotropic and expands the first opening 104′ to exposethe channel region 122. The second etch may result in rounded and/ortilted sidewalls, although vertical sidewalls 106 a, 106 b areillustrated. In some embodiments, the process for performing the secondetch includes applying a wet etchant 802 to the remaining firstdielectric layer 106″ with the first photoresist layer 702 in place. Thefirst photoresist layer 702 is then removed. The wet etchant 802 may be,for example, a buffered oxide etchant (BOE). In other embodiments, a dryetch or some other etch is performed in lieu of the wet etch.

FIG. 9 illustrates a cross-sectional view 900 of some embodimentscorresponding to Acts 312 and 314. As illustrated, a bio-sensing layer108 is formed conformally extending along the backside of the remainingfirst substrate 402′″, the remaining integrated circuit 202″″, and theremaining first dielectric layer 106, and lining the first, expandedopening 104. The bio-sensing layer 108 is formed as a high κ dielectricwith a dielectric constant exceeding about 3.9. For example, thebio-sensing layer 108 may be formed as hafnium oxide. Further, in someembodiments, the bio-sensing layer 108 is formed with a thickness ofabout 100 Angstroms. The process for forming the bio-sensing layer 108may include, for example, chemical vapor deposition (CVD), physicalvapor deposition (PVD), atomic layer deposition (ALD), or some otherdeposition technique.

Also illustrated by FIG. 9, a third dielectric layer 110′ is formedconformally extending along the backside of the remaining firstdielectric layer 106, and lining the first, expanded opening 104 overthe bio-sensing layer 108. The third dielectric layer 110′ may be, forexample, formed as an oxide. Further, the third dielectric layer 110′may be, for example, formed with a thickness of about 1000 Angstroms.The process for forming the third dielectric layer 110′ may include, forexample, CVD, PVD, or ALD. Thus, in some embodiments, the bio-sensinglayer 108 and the third dielectric layer 110′ may exhibit a v-shaped oru-shaped cross-sectional profile.

FIG. 10 illustrates a cross-sectional view 1000 of some embodimentscorresponding to Act 316. As illustrated, a third, dry etch is performedto the bio-sensing layer 108, through a region of the third dielectriclayer 110′ overlying the channel region 122, to form a second opening112. In some embodiments, the second opening 112 is formed with a widthof about 0.2 μm to about 0.4 μm. The third etch is typically anistropicand exposes a region of the bio-sensing layer 108 immediately above thechannel region 122. Advantageously, during the third etch, thebio-sensing layer 108 serves as an etch stop to prevent surface damageto the channel region 122 and to allow increased control over the widthof the second opening 112. As discussed above, by preventing surfacedamage and increasing control over the second opening width, deviceperformance is increased.

In some embodiments, the process for performing the third etch includesforming a second photoresist layer 1002 masking regions of the thirddielectric layer 110′ surrounding the second opening 112.Advantageously, the same photomask used to form the first photoresistlayer 702 may be used to form the second photoresist layer 1002, therebyreducing costs. Thereafter, a dry etchant 1004 is applied to the thirddielectric layer 110′ according to the second photoresist layer 1002.The dry etchant 1004 may have a base gas of, for example, Ar, CF₄, CHF₃,or SF₆. In some embodiments, the dry etchant 1004 has a selectivity ofabout 20 for the third dielectric layer 110′ relative to the bio-sensinglayer 108. For example, such a selectivity may be obtained by applyingthe dry etchant 1004 from about 60 inches above the third dielectriclayer 110′ with a pressure of about 800 millitorr and a power of about800 watts, where the dry etchant 1004 includes about 100 standard cubiccentimeters per minute (sccm) of Ar, about 350 sccm of helium (He),about 50 sccm of CF₄, about 30 sccm of CHF₃, and about 20 sccm ofnitrogen (N₂). With the dry etchant 1004 applied, the second photoresistlayer 1002 is removed. In other embodiments, a wet etch or some otheretch is performed in lieu of the dry etch.

FIG. 11 illustrates a cross-sectional view 1100 of some embodimentscorresponding to Act 318. As illustrated, a MEMS structure 204 is bondedto the second substrate 214′ through the remaining integrated circuit202″″. The MEMS structure 204 uses micro fluidics to direct a testsample to the first, expanded and second openings 104, 112. In otherembodiments, the MEMS structure 204 may be arranged on the backside ofthe second substrate 214′.

FIG. 12 illustrates a cross-sectional view 1200 of some embodimentscorresponding to Act 320. As illustrated, one or more second, throughsubstrate vias 220 extending through the second substrate 214′ to themetallization layers 210 are formed. Also illustrated, a BGA 216 isformed on the backside of the second substrate 214′. The BGA 216includes a RDL 218 electrically coupled to the metallization layers 210through the second vias 220. The RDL 218 is covered by a fourth, BGAdielectric layer 222, and UBM layers 224 extend through the BGAdielectric layer 222 to electrically couple solder balls 226 underlyingthe UBM layers 224 to the RDL 218. In other embodiments, schemes otherthan the BGA 216 can be used for packaging the semiconductor structure.

Thus, as can be appreciated from above, the present disclosure providesa bio-sensing semiconductor structure. A transistor includes a channelregion and a gate underlying the channel region. A first dielectriclayer overlies the transistor. A first opening extends through the firstdielectric layer to expose the channel region. A bio-sensing layer linesthe first opening and covers an upper surface of the channel region. Asecond dielectric layer lines the first opening over the bio-sensinglayer. A second opening within the first opening extends to thebio-sensing layer, through a region of the second dielectric layeroverlying the channel region.

In other embodiments, the present disclosure provides a method formanufacturing a bio-sensing semiconductor structure. A semiconductorstructure in which a first dielectric layer overlies a transistor isprovided. The transistor includes a channel region overlying a gate. Afirst etch is performed into the first dielectric layer to form a firstopening overlying the channel region. A second etch is performed into aregion of the first dielectric layer extending along the first openingto expand the first opening and to expose the channel region. Abio-sensing layer is formed lining the first, expanded opening. A seconddielectric layer is formed lining the first, expanded opening over thebio-sensing layer. A third etch is performed to the bio-sensing layer,through a region of the second dielectric layer overlying the channelregion, to form a second opening.

In yet other embodiments, the present disclosure provides a bio-sensingsemiconductor structure. ABEOL metallization stack overlies a substrateand includes a gate electrode near an upper surface thereof. Asemiconductor layer overlies the BEOL metallization stack and includesfirst and second source/drain regions which are spaced apart from oneanother by a channel region. The channel region overlies the gateelectrode and is separated therefrom by a gate dielectric. A firstdielectric layer overlies the semiconductor layer and includes a wellrecess therein. The well recess is configured to retain a liquid testsample for bio-sensing analysis and is disposed directly over thechannel region. A bio-sensing layer lines the well recess, covers innersidewalls of the first dielectric layer proximate to the channel region,and covers an upper surface of the channel region. A second dielectriclayer overlies the bio-sensing layer and has a second opening thatexposes less than an entire upper surface of the bio-sensing layerwithin the well recess.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

1-9. (canceled)
 10. A method for manufacturing a bio-sensingsemiconductor structure, the method comprising: providing asemiconductor structure in which a first dielectric layer overlies atransistor, the transistor including a channel region overlying a gate;performing a first etch into the first dielectric layer to form a firstopening overlying the channel region; performing a second etch into aregion of the first dielectric layer extending along the first openingto expand the first opening and to expose the channel region; forming abio-sensing layer lining the first, expanded opening; forming a seconddielectric layer lining the first, expanded opening over the bio-sensinglayer; and performing a third etch to the bio-sensing layer, through aregion of the second dielectric layer overlying the channel region, toform a second opening.
 11. The method according to claim 10, furtherincluding: forming the bio-sensing layer of a dielectric with adielectric constant exceeding about 3.9.
 12. The method according toclaim 10, further including: forming the bio-sensing layer with hafniumoxide.
 13. The method according to claim 10, further including: formingthe bio-sensing layer and the second dielectric layer with respectivethicknesses of about 100 angstroms (Å) and 1000 Å.
 14. The methodaccording to claim 10, further including: forming the second openingwith a width of about 0.2 micrometers (μm) to about 0.4 μm.
 15. Themethod according to claim 10, wherein performing the third etchincludes: applying an etchant with a selectivity of about 20 for thesecond dielectric layer relative to the bio-sensing layer.
 16. Themethod according to claim 10, further including: forming a firstphotoresist layer over the first dielectric layer using a photomask;performing the first and second etches according to the firstphotoresist layer; removing the first photoresist layer and subsequentlyforming the bio-sensing layer and the second dielectric layer; forming asecond photoresist layer over the first dielectric layer using thephotomask; performing the third etch according to the second photoresistlayer; and removing the second photoresist layer.
 17. The methodaccording to claim 10, wherein providing the semiconductor structureincludes: providing an integrated circuit having the transistor arrangedon a first side of a substrate, wherein the substrate includes first andsecond semiconductor layers stacked on opposing sides of the firstdielectric layer, and wherein the channel region is arranged in thesecond semiconductor layer; performing a planarization on a second sideof the substrate, opposite the first side of the substrate, through thefirst semiconductor layer to expose the first dielectric layer; andbonding the integrated circuit to a second substrate on the first sideof the substrate.
 18. The method according to claim 10, furtherincluding: bonding or forming a microelectromechanical systems (MEMS)structure over the first dielectric layer.
 19. The method according toclaim 10, further including: forming a ball grid array (BGA) underlyingthe semiconductor structure.
 20. (canceled)
 21. The method according toclaim 10, further comprising: performing the third etch to form thesecond opening exposing the bio-sensing layer and with a width less thanthat of the first, expanded opening.
 22. A method for manufacturing abio-sensing semiconductor structure, the method comprising: providing atransistor that is covered by a first dielectric layer and thatcomprises a channel region and a gate underlying the channel region;forming a first opening extending through the first dielectric layer toexpose the channel region; forming a bio-sensing layer lining the firstopening; forming a second dielectric layer lining the first opening overthe bio-sensing layer; and forming a second opening extending throughthe second dielectric layer to expose the bio-sensing layer.
 23. Themethod according to claim 22, further comprising: forming thebio-sensing layer with a dielectric constant exceeding about 3.9. 24.The method according to claim 22, further comprising: forming thebio-sensing layer and the second dielectric layer each with a u-shapedor v-shaped cross-sectional profile.
 25. The method according to claim22, wherein forming the first opening comprises: performing a first etchinto the first dielectric layer to form the first opening with a bottomsurface spaced over the channel region; and performing a second etchinto first dielectric layer, through the first opening, to expand thefirst opening and to expose the channel region.
 26. The method accordingto claim 25, further comprising: performing the first etch by dryetching and the second etch by wet etching.
 27. The method according toclaim 22, further comprising: forming the second opening with a widthless than that of the first opening.
 28. A method for manufacturing awell, the method comprising: providing a first dielectric layer over asubstrate; performing a first etch into the first dielectric layer toform a first opening spaced over a lower surface of the first dielectriclayer; performing a second etch into the first dielectric layer toexpand the first opening and to expose the substrate; forming a reactivelayer conformally lining the first, expanded opening; forming a seconddielectric layer conformally lining the first, expanded opening over thereactive layer; and performing a third etch through second dielectriclayer to form a second opening exposing the reactive layer, wherein thethird etch stops on the reactive layer.
 29. The method according toclaim 28, further comprising: performing the first etch by dry etching;and performing the second etch by wet etching.
 30. The method accordingto claim 28, further comprising: performing the first and third etcheswith respective photoresist layers in place, wherein the photoresistlayers are patterned with the same photomask.